Patent · US Active

Inverted metamorphic multijunction solar cells with doped alpha layer

US9691928B2 · kind B2 · utility

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Key dates

Filing dateOct 2, 2013
Grant dateJun 27, 2017
Priority date
Expiry dateDec 10, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A method of forming a multijunction solar cell comprising at least an upper subcell, a middle subcell, and a lower subcell, the method including forming a first alpha layer over said middle solar subcell using a surfactant and dopant including selenium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming a lower solar subcell over said grading interlayer such that said lower solar subcell is lattice mismatched with respect to said middle solar subcell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.