Advanced electronic device structures using semiconductor structures and superlattices
US9691938B2 · kind B2 · utility
23Cited by
81References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 21, 2015 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Dec 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.