Patent · US Active

Single-cystalline aluminum nitride substrate and a manufacturing method thereof

US9691942B2 · kind B2 · utility

0Cited by

2References

16Claims

0Family size

Assignees

NATIONAL UNIVERSITY ORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY · JP
TOKUYAMA CORPORATION · JP

Inventors

Akinori Koukitu · Tokyo, JP
Yoshinao Kumagai · Fuchu, JP
Toru Nagashima · Shunan, JP
Yuki Hiraren · Yamaguchi, JP

Key dates

Filing date	Dec 22, 2011
Grant date	Jun 27, 2017
Priority date	—
Expiry date	Sep 30, 2032

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B23/00
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1×1014 atoms/cm3 or more and less than 3×1017 atoms/cm3, a chlorine concentration is 1×1014 to 1×1017 atoms/cm3, and an absorption coefficient at 265 nm wavelength is 40 cm−1 or less.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.