Magnetic memory devices having perpendicular magnetic tunnel structures therein
US9691967B2 · kind B2 · utility
2Cited by
7References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 17, 2016 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Jun 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking layer is formed as an amorphous metal compound. In some of the embodiments, the blocking layer is a thermally treated layer and an amorphous state of the blocking layer is maintained during and post thermal treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.