Semiconductor device and dielectric film including a fluorite-type crystal
US9691973B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2015 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Sep 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a dielectric film provided between the first and the second conductive layers. The dielectric film including a fluorite-type crystal and a positive ion site includes Hf and/or Zr, and a negative ion site includes O. In the dielectric film, parameters a, b, c, p, x, y, z, u, v and w satisfy a predetermined relation. The axis length of the a-axis, b-axis and c-axis of the original unit cell is a, b, and c, respectively. An axis in a direction with no reversal symmetry is c-axis, a stacking direction of atomic planes of two kinds formed by negative ions disposed at different positions is a-axis, the remainder is b-axis. The parameters x, y, z, u, v and w are values represented using the parameter p.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.