High-concentration active doping in semiconductors and semiconductor devices produced by such doping
US9692209B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2012 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Sep 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3054
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.