Patent · US Active

High brightness liquid droplet X-ray source for semiconductor metrology

US9693439B1 · kind B1 · utility

7Cited by
3References
19Claims
0Family size

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Key dates

Filing dateJun 13, 2014
Grant dateJun 27, 2017
Priority date
Expiry dateDec 26, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2235/082
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Methods and systems for realizing a high brightness liquid metal droplet based x-ray source suitable for high throughput x-ray metrology are presented herein. A high power laser bombards a solid target material to generate liquid metal droplets. The laser generated liquid metal droplets are excited with a focused, high power excitation beam such as an electron or laser beam. The excitation beam is synchronized with the stream of liquid metal droplets stimulated by the high power laser to achieve a stable x-ray emission generated by the excited liquid metal droplets. In some embodiments, x-ray optics are designed to efficiently collect and focus radiation within a desired emission band onto a measurement target. Reliability is improved by shielding the excitation source and the x-ray optics from the region of interaction between the excitation beam and the liquid metal droplet anode by a localized curtain of shielding gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.