High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer
US9695503B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2015 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Aug 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing a nanocrystalline diamond layer are disclosed herein. The method can include delivering a sputter gas to a substrate positioned in a processing region of a first process chamber, the first process chamber having a carbon-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma having a sputtering duration, the energy pulse having an average power between 1 W/cm2 and 10 W/cm2 and a pulse width which is less than 100 μs and greater than 30 μs, the sputtering plasma being controlled by a magnetic field, the magnetic field being less than 300. Gauss, and delivering the sputtering plasma to the sputter target to form an ionized species, the ionized species forming a crystalline carbon-containing layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.