Patent · US Active

Surface-normal coupler for silicon-on-insulator platforms

US9696486B2 · kind B2 · utility

12Cited by
9References
11Claims
0Family size

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Key dates

Filing dateJul 31, 2013
Grant dateJul 4, 2017
Priority date
Expiry dateMay 10, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2006/12176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photonic integrated circuit (PIC) is described. This PIC includes an inverse facet mirror on a silicon optical waveguide for optical proximity coupling between two silicon-on-insulator (SOI) chips placed face to face. Accurate mirror facets may be fabricated in etch pits using a silicon micro-machining technique, with wet etching of the silicon <110> facet at an angle of 45° when etched through the <100> surface. Moreover, by filling the etch pit with polycrystalline silicon or another filling material that has an index of refraction similar to silicon (such as a silicon-germanium alloy), a reflecting mirror with an accurate angle can be formed at the end of the silicon optical waveguide using: a metal coating, a dielectric coating, thermal oxidation, or selective silicon dry etching removal of one side of the etch pit to define a cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.