Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9698007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2015 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Jul 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.