Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps

US9698011B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Bérangère Hyot · Eybens, FR
• Benoît Amstatt · Grenoble, FR
• Marie-Francoise Armand · Échirolles, FR

Key dates

• Filing date: Oct 28, 2013
• Grant date: Jul 4, 2017
• Expiry date: Oct 28, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/817
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).