Method of manufacturing element chip and element chip
US9698073B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Sep 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a plasma processing step in a method of manufacturing an element chip in which a plurality of element chips are manufactured by dividing a substrate, which has a plurality of element regions, the substrate is divided into element chips by exposing the substrate to first plasma. In a protection film forming step of forming a protection film covering a side surface and a second surface by exposing the element chips to second plasma of which raw material gas is mixed gas of carbon fluoride and helium, protection film forming conditions are set such that a thickness of a second protection film of the second surface is greater than a thickness of a first protection film of the side surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.