3D chip-on-wafer-on-substrate structure with via last process
US9698081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Sep 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a package having a first redistribution layer (RDL) disposed on a first semiconductor substrate and a second RDL disposed on a second semiconductor substrate. The first RDL is bonded to the second RDL. The package further includes an insulating film disposed over the second RDL and around the first RDL and the first semiconductor substrate. A conductive element is disposed in the first RDL. A via extends from a top surface of the insulating film, through the first semiconductor substrate to the conductive element, and a spacer is disposed between the first semiconductor substrate and the via. The spacer extends through the first semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.