Power semiconductor device
US9698091B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2015 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Dec 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device includes an insulating substrate, a semiconductor element, a case, and a wiring member. The case forms a container body having a bottom surface defined by a surface of the insulating substrate, to which said semiconductor element is bonded. The wiring member has a bonding portion positioned above an upper surface electrode of the semiconductor element. The bonding portion of the wiring member is provided with a projection portion projecting toward the upper surface electrode of the semiconductor element and bonded to the upper surface electrode with a solder, and a through hole passing through the bonding portion in a thickness direction through the projection portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.