Patent · US Active

Semiconductor device and method of manufacturing a semiconductor device

US9698107B2 · kind B2 · utility

1Cited by

6References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Dietrich Bonart · Bad Abbach, DE
Alfred Goerlach · Tübingen, DE

Key dates

Filing date	Nov 28, 2015
Grant date	Jul 4, 2017
Priority date	—
Expiry date	Nov 28, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/13091
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Various embodiments provide a semiconductor device, wherein the semiconductor device comprises a semiconductor device chip formed at a substrate, wherein the semiconductor device chip comprises an active region formed in a center of the substrate and a boundary region free of active components of the semiconductor device chip; and a detection wiring arranged in the boundary region of the substrate and at least partially surrounding the active region, wherein the detection wiring and the semiconductor device chip are electrically isolated from each other; and wherein the detection wiring and the substrate are electrically connected with each other via a connection having a high electrical resistance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.