Semiconductor device
US9698154B2 · kind B2 · utility
4Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | May 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device includes a substrate, a plurality of memory cell arrays, and an air gap structure. The substrate includes a cell region, a peripheral circuit region, and a boundary region. The boundary region is between the cell region and the peripheral circuit region. The plurality of memory cell arrays are on the cell region. The air gap structure includes a trench formed in the boundary region of the substrate. The air gap structure defines an air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.