Patent · US Active

Method of producing a semiconductor arrangement

US9698247B2 · kind B2 · utility

0Cited by

10References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Manfred Kotek · Villach, AT
Johannes Baumgartl · Arnoldstein, AT
Markus Harfmann · Tuttlingen, DE
Christian Krenn · Pernegg, AT
Thomas Neidhart · Klagenfurt, AT

Key dates

Filing date	Mar 16, 2016
Grant date	Jul 4, 2017
Priority date	—
Expiry date	Mar 16, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor arrangement is produced by providing a semiconductor carrier of a second conduction type and epitaxially growing a first semiconductor zone of a first conduction type on the carrier. The first semiconductor zone includes a semiconductor base material doped with first and second dopants which are made of different substances which are both different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes a decrease or an increase of a lattice constant of the first semiconductor zone. The second dopant causes one or both of hardening of the first semiconductor zone and an increase of the lattice constant of the first semiconductor zone if the first dopant causes a decrease, or a decrease of the lattice constant of the first semiconductor zone if the first dopant causes an increase.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.