Patent · US Active

Detachment of a self-supporting layer of silicon <100>

US9698289B2 · kind B2 · utility

4Cited by

10References

14Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Carole Braley · St-Estève, FR
Frédéric Mazen · Grenoble, FR

Key dates

Filing date	Jul 1, 2013
Grant date	Jul 4, 2017
Priority date	—
Expiry date	Jul 1, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for detaching a self-supporting layer of silicon of crystalline orientation <100>, particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation <100> so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30° C./s so as to detach the self-supporting layer of silicon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.