Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references
US9698345B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Oct 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/882
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the storage component material on approximately vertical walls of the trench and a bottom of the trench. Embodiments may also include etching the storage component material so that at least a portion of the storage component material remains on the approximately vertical walls and the bottom of the trench, wherein the trench is contacting an electrode and a selector such that storage component material on the bottom of the trench contacts the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.