Method and apparatus for irradiating a semiconductor material surface by laser energy
US9700959B2 · kind B2 · utility
1Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2010 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Dec 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5258
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.