Semiconductor memory device
US9704584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2016 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Mar 3, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a first block including a first memory string that includes a first memory cell and a first select transistor, a second block including a second memory string that includes a second memory cell and a second select transistor, a source line that is connected to the first memory string and the second memory string, and a controller that applies a source line voltage to the source line and a first voltage to a gate of the second select transistor during a program operation in which data is written to the first memory cell, the first voltage being greater than ground voltage and less than or equal to the source line voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.