Semiconductor device and manufacturing method thereof
US9704747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2014 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device having a stably formed structure capable of being electrically connected to a second electronic device without causing damage to the semiconductor device, and a manufacturing method thereof. In one embodiment, the semiconductor device may comprise a semiconductor die, an encapsulation part formed on lateral surfaces of the semiconductor die, a dielectric layer formed on the semiconductor die and the encapsulation part, a redistribution layer passing through a part of the dielectric layer and electrically connected to the semiconductor die, a plurality of conductive balls extending through other parts of the dielectric layer and electrically connected to the redistribution layer where the conductive balls are exposed to an environment outside of the semiconductor device, and conductive vias extending through the encapsulation part and electrically connected to the redistribution layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.