Fin field effect transistor and method for fabricating the same
US9704752B1 · kind B1 · utility
12Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2016 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Feb 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a fin field effect transistor (FinFET) comprising the following steps is provided. A substrate comprising a plurality of trenches and a plurality of semiconductor fins between the trenches is provided. A plurality of insulators are formed in the trenches. A fin cut process is performed to remove portions of the semiconductor fins until a plurality of concaves are formed between the insulators. A gate stack is formed to partially cover the semiconductor fins and the insulators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.