Heterojunction bipolar transistor
US9704967B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 14, 2015 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Oct 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
The present disclosure is directed to a method that includes exposing a surface of a silicon substrate in a first region between first and second isolation trenches, etching the silicon substrate in the first region to form a recess between the first and second isolation trenches, and forming a base of a heterojunction bipolar transistor by selective epitaxial growth of a film comprising SiGe in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.