Method of forming a high electron mobility transistor
US9704968B2 · kind B2 · utility
2Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2016 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Jun 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a high electron mobility transistor (HEMT) that includes epitaxially growing a second III-V compound layer on a first III-V compound layer. A carrier channel is located between the first III-V compound layer and the second III-V compound layer. A source feature and a drain feature are formed on the second III-V compound layer. A p-type layer is deposited on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is formed on a portion of the p-type layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.