Schottky diode having floating guard rings
US9705010B2 · kind B2 · utility
4Cited by
0References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 14, 2015 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Dec 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present examples relate to a Schottky diode having floating guard rings and an additional element isolation layer configured to further improve a breakdown voltage of the Schottky diode, while maintaining the turn-on voltage and current in the forward characteristic, compared to a related Schottky diode. The floating guard rings in the examples are located in a position between the anode and the cathode regions or under the anode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.