Cobalt (Co) and platinum (Pt)-based multilayer thin film having inverted structure and method for manufacturing same
US9705075B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2012 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Jun 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/123
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt layers and thin platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic thin layer is greater than that of a non-magnetic thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic tunnel junction by controlling the perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers. Also, the multilayer thin film has excellent thermal stability, and thus maintains its PMA energy density even after being subjected to a heat treatment process. In addition, it enables a fine amount of in-plane m…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.