Magnetoresistive element and manufacturing method of the same
US9705076B2 · kind B2 · utility
11Cited by
2References
17Claims
0Family size
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Key dates
| Filing date | Sep 5, 2014 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Jan 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
According to one embodiment, there is provided a magnetoresistive element, including a lower electrode having crystallinity on a substrate, a first conductive layer including an amorphous state on the lower electrode, a buffer layer on the first conductive layer, and an MTJ element on the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.