Method of manufacturing semiconductor device
US9708708B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Sep 8, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45578
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film is efficiently formed by sufficiently supplying a source gas to substrates accommodated in a process chamber, and the uniformity of a film formed on the substrates is improved. A method of a semiconductor device manufacturing includes (a) supplying a source gas to an upper region of a process chamber through a first gas supply hole disposed at a front end of a first nozzle disposed in a lower region of the process chamber where the source gas is not pyrolyzed; (b) supplying the source gas to substrates disposed in the lower region and a middle region of the process chamber through a plurality of second gas supply holes of a second nozzle; and (c) supplying a reactive gas to substrates disposed in the lower region, the middle region and the upper region of the process chamber through a plurality of third gas supply holes of a third nozzle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.