Method of producing silicon single crystal
US9708731B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Jan 29, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing a silicon single crystal is provided. The method may include taking a real image of a heat shield including a circular opening and a mirror image of the heat shield reflected on a surface of the silicon melt, measuring a spacing between the real image and the mirror image, calculating a position of the surface of the silicon melt, taking an image of a bright zone that appears in a vicinity of an interface between the silicon melt and the silicon single crystal, calculating a position of the surface of the silicon melt based on a center position of the silicon single crystal determined from the image of the bright zone, and controlling the position of the surface of the silicon melt during a pulling of the silicon single crystal while referring to data of the calculated positions of the surface of the silicon melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.