Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy
US9708733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2014 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Jun 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The method for manufacturing an aluminum-based group III nitride single crystal includes the step of supplying an aluminum halide gas and a nitrogen source gas onto a base substrate, such that a reaction of the aluminum halide gas and the nitrogen source gas is conducted on the base substrate, wherein the reaction of the aluminum halide gas and the nitrogen source gas is conducted under coexistence of a halogen-based gas such that a halogen-based gas ratio (H) represented by the following formula (1) is no less than 0.1 and less than 1.0:H=VH/(VH+VAl) (1)(In the formula (1), VH represents a supply of the halogen-based gas; and VAl represents a supply of the aluminum halide gas); and a growth rate of the aluminum-based group III nitride single crystal is no less than 10 μm/h.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.