Patent · US Active

Micromechanical pressure sensor device and corresponding manufacturing method

US9709451B2 · kind B2 · utility

5Cited by
19References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 8, 2015
Grant dateJul 18, 2017
Priority date
Expiry dateOct 3, 2035

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81B2201/0264
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A micromechanical pressure sensor device includes: an MEMS wafer having a front side and a rear side; a first micromechanical functional layer formed above the front side of the MEMS wafer; and a second micromechanical functional layer formed above the first micromechanical functional layer. A deflectable first pressure detection electrode is formed in one of the first and second micromechanical functional layers. A fixed second pressure detection electrode is formed spaced apart from and opposite the deflectable first pressure detection electrode. An elastically deflectable diaphragm area is formed above the front side of the MEMS wafer. An external pressure is applied to the diaphragm area via an access opening in the MEMS wafer, and the wafer is connected to the deflectable first pressure detection electrode via a plug-like joining area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.