System and method for detecting design and process defects on a wafer using process monitoring features
US9710903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2009 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Dec 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Various systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof are provided. One system is configured to detect design defects and process defects at locations on a wafer at which images are acquired by an electron beam review subsystem based on defects in a design, additional defects in the design, which are detected by comparing an image of a die in the design printed on the wafer acquired by the electron beam review subsystem to an image of the die stored in a database, and defects detected on the wafer by a wafer inspection system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.