Electronic device
US9711202B2 · kind B2 · utility
7Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Mar 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include: an under layer including a plurality of material layers having a different crystal structures; a first magnetic layer formed over the under layer and having a variable magnetization direction; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer and having a pinned magnetization direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.