Test structure for electron beam inspection and method for defect determination using electron beam inspection
US9711326B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Jan 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A test structure for electron beam inspection and a method for defect determination using electron beam inspection are provided. The test structure for electron beam inspection includes a semiconductor substrate, at least two conductive regions disposed on the semiconductor substrate, a connection structure disposed on the two conductive regions, and a cap dielectric layer disposed on the connection structure. The method for defect determination using the electron beam inspection includes the following steps. An electron beam inspection is preformed to a test structure with an instant detector and a lock-in amplifier. Signals received by the detector within a period of time are amplified by the lock-in amplifier. A defect in the test structure is determined by monitoring the signals received by the detector and amplified by the lock-in amplifier. The inspection accuracy is improved by the test structure and the method for defect determination in the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.