Method of forming an air gap semiconductor structure with selective cap bilayer
US9711455B2 · kind B2 · utility
5Cited by
11References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 8, 2015 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Dec 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate including one or more conductors is provided. A first layer and a second layer are deposited on the top surface of the conductors. A dielectric cap layer is formed over the semiconductor substrate and air gaps are etched into the dielectric layer. The result is a bilayer cap air gap structure with effective electrical performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.