Dual facing BSI image sensors with wafer level stacking

US9711555B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ping-Yin Liu · Yonghe, TW
• Yeur-Luen Tu · Taichung, TW
• Chia-Shiung Tsai · Jinshanmian, TW
• Xiaomeng Chen · Hsinchu, TW
• Pin-Nan Tseng · Baoshan, TW

Key dates

• Filing date: Sep 27, 2013
• Grant date: Jul 18, 2017
• Expiry date: Aug 19, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.