Wide bandgap high-density semiconductor switching device and manufacturing process thereof
US9711599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2015 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Jun 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A switching device, such as a barrier junction Schottky diode, has a body of silicon carbide of a first conductivity type housing switching regions of a second conductivity type. The switching regions extend from a top surface of the body and delimit body surface portions between them. A contact metal layer having homogeneous chemical-physical characteristics extends on and in direct contact with the top surface of the body and forms Schottky contact metal portions with the surface portions of the body and ohmic contact metal portions with the switching regions. The contact metal layer is formed by depositing a nickel or cobalt layer on the body and carrying out a thermal treatment so that the metal reacts with the semiconductor material of the body and forms a silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.