One-dimensional nanostructure growth on graphene and devices thereof
US9711607B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 15, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Apr 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for providing a GAA device. In some embodiments, a substrate including an insulating layer disposed thereon is provided. By way of example, a first metal portion is formed within the insulating layer. In various embodiments, a first lateral surface of the first metal portion is exposed. After exposure of the first lateral surface of the first metal portion, a first graphene layer is formed on the exposed first lateral surface. In some embodiments, the first graphene layer defines a first vertical plane parallel to the exposed first lateral surface. Thereafter, in some embodiments, a first nanobar is formed on the first graphene layer, where the first nanobar extends in a first direction normal to the first vertical plane defined by the first graphene layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.