Hall effect sensor with graphene detection layer

US9714988B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Eckinger · Regenstauf, DE
• Stefan Kolb · Unterschleißheim, DE
• Alfons Dehe · Reutlingen, DE
• Guenther Ruhl · Regensburg, DE

Key dates

• Filing date: Oct 15, 2014
• Grant date: Jul 25, 2017
• Expiry date: May 5, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N52/101
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.