Patent · US Active

Low read data storage management

US9715939B2 · kind B2 · utility

12Cited by
27References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 28, 2015
Grant dateJul 25, 2017
Priority date
Expiry dateOct 28, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/349
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Systems and methods disclosed herein are used to efficiently manage low read data. In one aspect, a method includes, in response to detecting occurrence of a first event (e.g., PFail), writing low read data to non-volatile memory of a storage device with a fast SLC programming mode, distinct from a default SLC programming mode. Writing the low read data with the fast SLC programming mode: (i) includes using one or more memory programming parameters distinct from a default set of memory programming parameters used for writing data with the default SLC programming mode and (ii) takes less time per predefined unit of data than writing data with the default SLC programming mode. The method also includes: in response to detecting occurrence of a second event (e.g., host write command), writing data corresponding to the second event with the default SLC programming mode using the default set of memory programming parameters.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.