Automatic built-in self test for memory arrays
US9715944B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2016 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Jun 15, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/4402
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory array includes m·(n+1) memory cells, wherein n and m are natural numbers greater than zero. Each of the plurality of memory cells is connected to one of (n+1) bitlines and one of m wordlines. The memory array further includes n outputs configured for reading a content of the memory array. The memory array further includes n output switches, wherein an i-th output switch is configured for selectively connecting, in response to a switching signal, either an i-th bitline or an (i+1)-th bitline to an i-th output, and wherein i is a natural number and 0≦i≦n−1. The memory array further includes an (n+1)-th output switch, wherein the (n+1)-th output switch is configured for selectively connecting, in response to the switching signal, either the (n+1)-th bitline or a defined potential to an (n+1)-th output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.