Sloped photoresist edges for defect reduction for metal dry etch processes
US9716013B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2014 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Feb 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a metal containing layer including a metal including material includes providing a substrate including a top semiconductor surface having the metal containing layer thereon. A photoresist pattern is formed from a photoresist layer on the metal containing layer including forming sloped edge regions of the photoresist layer, wherein the sloped edge regions have an average angle over a full length of the sloped edge regions of from ten (10) to fifty (50) degrees. The metal containing layer is dry etched using the photoresist pattern, wherein the sloped edge regions of the photoresist layer reduce deposition and growth of an etch byproduct including the metal including material into sidewalls of the photoresist layer (metal/polymer sidewall defect) as compared to a conventional vertical (or near-vertical) edge of the photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.