Neng Jiang
11Patents
3h-index
14Co-inventors
49Inventor score
Filing activity: Feb 4, 2014 → Feb 7, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10009001B2 | Devices with specific termination angles in titanium tungsten layers and methods for fabricating the same | Electricity | 25 | Active |
| US9524881B2 | Method for fabricating specific termination angles in titanium tungsten layers | Electricity | 5 | Active |
| US9660603B2 | Sloped termination in molybdenum layers and method of fabricating | Electricity | 5 | Active |
| US9304283B2 | Bond-pad integration scheme for improved moisture barrier and electrical contact | Physics | 2 | Active |
| US9716013B2 | Sloped photoresist edges for defect reduction for metal dry etch processes | Electricity | 1 | Active |
| US9405089B2 | High-temperature isotropic plasma etching process to prevent electrical shorts | Physics | 0 | Active |
| US11148939B2 | Stress compensation for piezoelectric optical MEMS devices | Performing Operations; Transporting | 0 | Active |
| US9755139B2 | Piezoeletric wet etch process with reduced resist lifting and controlled undercut | Electricity | 0 | Active |
| US9890040B2 | Stress compensation for piezoelectric optical MEMS devices | Performing Operations; Transporting | 0 | Active |
| US9939710B2 | High-temperature isotropic plasma etching process to prevent electrical shorts | Physics | 0 | Active |
| US10319899B2 | Method of forming a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.