Semiconductor device redistribution layer with narrow trace width relative to passivation layer opening
US9716071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2015 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Jul 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with fine pitch redistribution layers is disclosed and may include a semiconductor die with a bond pad and a first passivation layer comprising an opening above the bond pad. A redistribution layer (RDL) may be formed on the passivation layer with one end of the RDL electrically coupled to the bond pad and a second end comprising a connection region. A second passivation layer may be formed on the RDL with an opening for the connection region of the RDL. An under bump metal (UBM) may be formed on the connection region of the RDL and a portion of the second passivation layer. A bump contact may be formed on the UBM, wherein a width of the RDL is less than a width of the opening in the second passivation layer and may be constant from the bond pad through at least a portion of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.