Thin capping for MEMS devices
US9718674B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2014 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Aug 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.