In-situ conditioning for vacuum processing of polymer substrates
US9719177B2 · kind B2 · utility
0Cited by
5References
14Claims
0Family size
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Inventor
Key dates
| Filing date | Oct 3, 2011 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Feb 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32871
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An etching chamber is equipped with an actively-cooled element preferentially adsorbs volatile compounds that are evolved from a polymeric layer of a wafer during etching, which compounds will act as contaminants if re-deposited on the wafer, for example on exposed metal contact portions where they may interfere with subsequent deposition of metal contact layers. In desirable embodiments, a getter sublimation pump is also provided in the etching chamber as a source of getter material. Methods of etching in such a chamber are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.