Hardmask composition and method of forming patterning by using the hardmask composition
US9721794B2 · kind B2 · utility
5Cited by
10References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 27, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Apr 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask composition includes at least one of a two-dimensional layered nanostructure and a precursor thereof, and a solvent, and an amount of the at least one of a two-dimensional layered nanostructure and the precursor is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.