Method and apparatus for depositing amorphous silicon film
US9721798B2 · kind B2 · utility
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2Claims
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Key dates
| Filing date | Sep 15, 2014 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Sep 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/103
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.