Semiconductor device and method for fabricating the same
US9721804B1 · kind B1 · utility
6Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Feb 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.